Texas Instruments: Optimizing GaN performance with integrared driver

May 04, 2016 // By Yong Xie and Paul Brohlin

Gallium nitride (GaN) transistors can switch much faster than silicon MOSFETs, thus having the potential to achieve lower switching losses. At high slew rates, however, certain package types can limit GaN FET switching performance. Integrating the GaN FET and driver in the same package reduces parasitic inductances and optimizes switching performance. Integrating the driver also enables the implementation of protection features.

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