Featuring low voltage operation of 1.2V/1.8V and a number of power-saving features, the 16Gb chip comes in a 11.0x11.5mm 178-ball FBGA package. The AS4C512M32MD3 features auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, its partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn't required.
Manufactured using a 20nm process, the AS4C512M32MD3 is internally configured as 8 banks x 32Mbit x 32. The device operates at a clock frequency of 667MHz and data rate of 1333Mbps, it is rated for use in the extended commercial temperature range of -25°C to +85°C. The LPDDR3 SDRAM offers fully synchronous operation and programmable read or write burst lengths of 4, 8, or 16. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence.
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