They demonstrated on a 300 mm pre-industrial platform a new level of isotopic purification in a film deposited by chemical vapour deposition (CVD). This enables creating qubits in thin layers of silicon using a very high purity silicon isotope, 28Si, which produces a crystalline quality comparable to thin films usually made of natural silicon.
“Using the isotope 28Si instead of natural silicon is crucial for the optimization of the fidelity of the silicon spin qubit,” explains Marc Sanquer, a research director at Inac.
“The fidelity of the spin qubit is limited to small values by the presence of nuclear spins in natural silicon. But spin qubit fidelity is greatly enhanced by using 28Si, which has zero nuclear spin. We expect to confirm this with qubits fabricated in a pre-industrial CMOS platform at CEA-Leti.”
Qubits are the building blocks of quantum information. They can be made in a broad variety of material systems, but when it comes to the crucial issue of large-scale integration, the range of possible choices narrows significantly. Silicon spin qubits have a small size and are compatible with CMOS technology. They therefore present advantages for large-scale integration compared to other types of qubits.
Since 2012, when the first qubits that relied on electron spins were reported, the introduction of isotopically purified 28Si has led to significant enhancement of the spin coherence time. The longer spin coherence lasts, the better the fidelity of the quantum operations.
Quantum effects are essential to understanding how basic silicon micro-components work, but the most interesting quantum effects, such as superposition and entanglement, are not used in circuits. The CEA-Leti and Inac results showed that these effects can be implemented in CMOS transistors operated at low temperature.