ST’s STripFET families use DeepGATE technology to achieve low R DS(on) per die area and low R DS(on) x gate charge (Qg), giving superior energy efficiency in familiar power packages. High avalanche ruggedness is another outstanding feature.
According to ST, the company’s STripFET F7 technology enhances switching performance and maximizes energy efficiency by lowering the body-diode reverse-recovery charge (Q rr) and reverse-recovery time (t rr), while softer recovery minimizes electromagnetic interference (EMI) thereby easing demand for filtering components. In addition, optimized device capacitances increase noise immunity, relieving the need for snubber circuitry, and threshold-voltage tuning ensures high false turn-on immunity without requiring a dedicated gate driver. In bridge circuits like motor drives, the soft diode recovery helps prevent shoot-through currents thereby enhancing reliability.
The new 40V STL140N4F7AG and STL190N4F7AG MOSFETs are qualified to AEC-Q101 in the PowerFLAT 5x6 package with wettable flanks. The compact footprint and 0.8mm profile enable high system power density, while the flank design aids solder-joint reliability and lifetime as well as allowing 100% automatic optical inspection.
For further information visit www.st.com/stripfetf7