Dual MOSFET increases the efficiency of smartphone and tablet battery charging

January 14, 2014 // By Paul Buckley
Toshiba Electronics Europe (TEE) has launched a new low-resistance dual N-channel MOSFET for power management applications in mobile devices. The SSM6N58NU MOSFET meets the needs of high current as well as wireless charging circuits used in smartphones, tablets and laptops.

As the battery capacity of mobile devices increases, there is a need for devices that support increased charging currents and frequencies to keep charging times to a minimum. The SSM6N58NU meets these needs with a maximum DC drain current (ID) of 4 A and maximum pulsed drain current (IDP) of 10 A. Furthermore, because the gate charge and capacitance of the MOSFET is reduced, fast switching is supported.

The N-channel MOSFET ensures efficiency and switching speeds through a design that minimizes ON resistance (RDS(ON)) and input capacitance (CISS). Input capacitance is as low as 129 pF, while RDS(ON) measures 67 mΩ at  VGS=4.5 V. This enables low loss and high speed operation with a turn-on time (ton) of 26ns, and a turn-off time (toff) of 9 ns. The low gate charge of Qg=1.8nC (@ ID=4 A) reduces the AC dissipation at 3 MHz enabling usage in DC converter applications. Independent MOSFET configuration and high ESD protection levels of ≥2 kV also enables usage in battery protection circuits.

The SSM6N58NU is supplied in a UDFN6 surface mount that requires 2 mm by 2 mm of board space with a body height of 0.75 mm. Due to the flat body of the structure, this package offers a power dissipation of 2 W and can withstand channel temperatures up to 150°C.

Visit Toshiba at www.toshiba-components.com