Compared to previous technologies the process yields size, weight and power improvements, important for systems such as high-throughput satellites, where the cost-per-bit-ratio can be significantly reduced. The 100V, 35A MOSFETs are suited to mission-critical applications requiring an operating life up to and beyond 15 years. Target applications include space-grade DC-DC converters, intermediate bus converters, motor controllers and other high speed switching designs.
IRHNJ9A7130 and IRHNJ9A3130 are fully characterized for TID (total ionizing dose) immunity to radiation of 100 kRads and 300 kRads respectively. An RDS(on) of 25 mΩ (typical) is 33% lower than the previous device generation. In combination with increased drain current capability (35A vs. 22A), this allows the FETs to provide increased power density and reduced power losses in switching applications.
The MOSFETs have improved Single Event Effect (SEE) immunity and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90 MeV/(mg/cm²); at least 10% higher than previous generations. Both of the new devices are packaged in a hermetically sealed, lightweight, surface mount ceramic package (SMD-0.5) measuring 10.28 x 7.64 x 3.12 mm. They are also available in bare die form.