EPC releases two lead-free and RoHS compliant eGaN FETs

March 15, 2011 // By Paul Buckley
Efficient Power Conversion Corporation has unveiled two lead-free RoHS-compliant enhancement-mode gallium nitride on silicon (eGaN) FETs.

The EPC2001 FET is a 100 VDS device with a maximum RDS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40VDS with a maximum RDS(ON)of 4 milliohms.  Both eGaN FETs provide performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

Applications that benefit from eGaN FET performance increases include DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits and telecom base stations.

Availability and Pricing

In 1k piece quantities, the EPC2001 is priced at $2.80 and the EPC2015 is priced at $2.48.  Both products are immediately available through Digi-Key Corporation.

An application note detailing the performance improvements of these next generation devices can be found at:
//epc-co.com/epc/ToolsandDesignSupport/Product-Training/Characteristics_of_Second_Generation_eGaN_FETs.pdf