First rad-hard 100V and 200V GaN FETs for space use EPC die: Page 2 of 2

February 07, 2018 // By Nick Flaherty
Renesas Electronics has launched the first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs for primary and secondary DC-DC converters in space launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications.

“We are pleased to see Renesas Electronics continue Intersil’s six decades of spaceflight product development and leadership,” said Alex Lidow, EPC’s co-founder and CEO. “These products demonstrate how eGaN technology increases the performance and reduces the cost for applications currently being served by MOSFETs.”

“Size, weight and power efficiency mean everything to designers and manufactures of launch vehicles and satellites,” said Philip Chesley, Vice President of Industrial Analog and Power Business Division at Renesas. “The new ISL7002xSEH GaN FETs and ISL70040SEH GaN FET driver represent the most meaningful power management innovation we’ve seen in a long time for the spaceflight industry.”

The ISL70023SEH 100V, 60A GaN FET or ISL70024SEH 200V, 7.5A GaN FET can be combined with the ISL70040SEH low side GaN FET driver and the ISL78845ASEH PWM controller to create launch vehicle and satellite switched mode power supplies.

The rad-hard ISL70023SEH 100V, 60A GaN FET and ISL70024SEH 200V, 7.5A GaN FET are available now in hermetically sealed 4-lead 9.0mm x 4.7mm SMD packages. For more information on the ISL70023SEH, please visit www.intersil.com/products/isl70023seh and  www.intersil.com/products/isl70024seh.

The rad-hard ISL70040SEH low side GaN FET driver is available now in a hermetically sealed 8-lead 6mm x 6mm SMD package at www.intersil.com/products/isl70040seh.


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