GaN-HEMT delivers 220 W for 2.6 GHz-band 4G base stations

August 31, 2016 // By Julien Happich
Mitsubishi Electric has developed a 220-W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering a high drain efficiency of 74% for 2.6 GHz-band base transceiver stations of 4G mobile communication systems.

Sampling will start in November. Several part numbers are available to cater for the power needs of macro-cells and small cells. The high efficiency will result in simpler cooling system, which reduces BTS size and power consumption, notes the company.