These short videos present end-customer applications using the company’s eGaN FETs and Ics and, the company says, challenge power systems design engineers to incorporate the high performance of gallium nitride FETs and ICs into their next generation power system designs.
The application demonstration videos posted are:
At APEC 2017, the premier power conversion conference, EPC showcased more than 25 applications. In this video, Alex Lidow, CEO, takes the viewer on a tour of our booth, showing eGaN FETs and ICs in a wide range of applications including a 2 x 3 ft. tabletop wirelessly powering multiple devices simultaneously.
In this home application, EPC demonstrates a wireless power tabletop simultaneously powering a laptop, a video monitor, Google Home, Amazon Alexa, a desk lamp, and a cell phone.
eGaNFETs and ICs switch – EPC asserts – ten times faster than silicon power MOSFET. This high speed gives LiDAR (Light Distancing and Ranging) systems superior resolution, faster response time, and greater accuracy.
This video shows a side-by-side comparison of a 100V GaN FET outperforming a comparable MOSFET in a much smaller footprint with 30% less power loss and 3X the power density.
This video shows a side-by-side comparison of a 200 V GaN FET outperforming a comparable MOSFET in a much smaller footprint – 15X smaller – with 40% less power loss and 3X the power density.
In this video is an example of a 48 V, 10 A 3-phase GaN Inverter reference design from Texas Instruments using the LMG5200. The GaN solution has better thermal profiles where heat sinks can be eliminated and the lower inductance reduces size and weight. This