GaN power transistors widen performance range

May 28, 2015 // By Paul Buckley
Efficient Power Conversion Corporation (EPC) has introduced two eGaN FETs to raise the bar for power conversion performance in a variety of applications including DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, LED lighting, and industrial automation.

The products have a maximum operating temperature of 150°C and pulsed currents capabilities of 200 A (150 V EPC2034) and 140 A (EPC2033) and expand EPC’s family of 'Relaxed Pitch' devices featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the 2.6 mm x 4.6 mm footprint.

To simplify the evaluation process of the high performance eGaN FETs, the EPC9047 development board is available to support easy 'in circuit' performance evaluation of the EPC2033. This board includes all the critical components that can be easily connected into any existing converter.

The EPC9047 is in a half-bridge topology measuring 2 x 1.5 inch and contains two EPC2033 eGaN FETs using the Texas Instruments UCC27611 gate driver, as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance and has various probe points to facilitate simple waveform measurement and efficiency calculation.

Availability and Pricing

The EPC2033 and EPC2034 are available for immediate delivery from Digi-Key.  The EPC9047 development board is $137.75.