Panasonic has provided Infineon with a license of the Japaneses company's normally-off GaN transistor structure. The agreement will enable each company to manufacture high performing GaN devices. Customers will have the advantage of having two possible sources for compatible packaged GaN power switches: a setup not available for any other GaN on silicon device so far. For the first time the companies will showcase samples of a 600 V 70m device in a DSO (Dual Small Outline) package at the trade show Applied Power Electronics Conference and Exposition (APEC), which will be held in Charlotte, North Carolina, March 15-19, 2015.
GaN on silicon enables high power density and a smaller footprint for power supplies and adapters, and serve as a major key for energy efficiency improvement. In general, power devices based on GaN on silicon technology can be used in a wide range of fields, from high voltage industrial applications such as power supplies in server farms (a potential application of the showcased 600 V GaN device) to low voltage applications such as DC-DC conversion (e.g., in high-end consumer goods).
“We are convinced that enhancement mode GaN on silicon switches, together with our corresponding driver and optimized driving scheme, will provide high value to our customers, while the dual sourcing concept will help them manage and stabilize their supply chains,” explained Andreas Urschitz, President of the Power Management & Multimarket Division of Infineon Technologies AG.
“Panasonic developed its normally-off GaN power technology which has a simple configuration and easy-to control dynamics, by making full use of its compound semiconductor experience. We expect to accelerate the expansion of GaN power devices by licensing our normally-off GaN transistor structure out of our GaN power technology to Infineon. We will continuously contribute to solutions for consumer requests by innovating our normally-off GaN technology,” said Toru Nishida, president of Panasonic Semiconductor Solutions Co. Ltd.
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