The MOSFETs can bring highest energy efficiency to end-applications such as power and gardening tools, light electric vehicles, drones and e-bikes that demand a high level of energy efficiency but are restricted in available space. This is made possible by the compact Medium Can DirectFET housing featuring a new layout.
The new StrongIRFET devices are housed in a Medium Can DirectFET package that features dual-sided cooling to deliver high power density and excellent thermal performance. By re-locating the gate pad to the corner of the die on these latest devices, the new layout significantly increases the source contact area to achieve even lower thermal resistance to the PCB than standard DirectFET packages, further improving efficiency, and increasing the scalability of design.
The new devices, which range from 40 to 75V, feature the characteristics of the StrongIRFET family, including low on-state resistance (RDS(on)) to minimise conduction losses, high current carrying capability and rugged silicon to improve system reliability.
“The reliability and performance of DirectFET packaging technology is further enhanced with a new layout that now offers even lower thermal resistance. Combined with rugged silicon, these new StrongIRFET DirectFET MOSFETs offer improvements in overall system-level size, efficiency and cost making them well suited to all space constrained applications that require that extra efficiency demanded by the manufacturer and the end-user,” said Stephane Ernoux, Product Marketing, Power Management and Multimarket Division, Infineon Technologies.