One of the papers, “NSP: Physical Compact Model for Stacked-planar and Vertical Gate-All-Around MOSFETs”, presents a predictive and physical compact model for NanoWire/NanoSheet (NW/NS) Gate-All-Around (GAA) MOSFETs. By using a novel methodology for the calculation of the surface potential including quantum confinement, the researchers claim the model is able to handle arbitrary NW/NS cross-section shape of stacked planar and vertical GAA MOSFETs (circular, square, rectangular), providing an excellent tool for design exploration.
This Nanowire Surface Potential (NSP) based model, they write, was validated both by numerical simulations and experimental data, which leads us to the second paper, "Vertically Stacked-Nanowires MOSFETs in a Replacement Metal Gate Process with Inner Spacer and SiGe Source/Drain” demonstrating an actual physical implementation.
In this paper, Leti shares its finding on the very first functional devices featuring stacked-NWs transistors with integrated inner spacers to reduce parasitic capacitances and SiGe source drain (S/D) stressors to boost performance.
Both building blocks are required for the 5nm node, the researchers believe, which would extend the scaling limits of CMOS technology as a natural progression from FinFETs.
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