Dawin, headquartered in Incheon, South Korea, makes insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and MOSFET modules. The acquisition is expected to be completed by the end of March.
"Dawin's high-power modules will enable MagnaChip to compete quickly and effectively in the high-growth IGBT market with a broader portfolio of power solutions for our customers," said Sang Park, MagnaChip's chairman and CEO, in a statement.
According to market research firm IHS iSuppli, the total IGBT market in 2011 was estimated to be $4.1 billion and is expected to grow at a compounded annual growth rate of 10 percent from 2011 to 2015. IGBTs are used in a range of medium- to high-power commercial and industrial applications and in many consumer appliances.
MagnaChip (Seoul, South Korea) said the acquisition of Dawin and its IGBT and FRD module technology is in line with the company's goal of expanding into high-growth, high-margin markets.