Cypress’ new FL-L devices also offer low power consumption with high read bandwidth and fast program time. With their small uniform 4KB physical memory sectors, these devices are suited for applications like Advanced Driver Assistance Systems (ADAS), automotive instrument clusters and infotainment systems, industrial control and smart factory equipment, networking equipment, IoT applications, video game consoles and set-top boxes.
High-performance system designs require high read bandwidth for program execution, small, low-pin-count packages, and fast program and erase times. Cypress’ 128Mb and 256Mb FL-L Quad SPI NOR Flash devices are each capable of 133-MHz Single Data Rate (SDR) and 66-MHz Double Data Rate (DDR) for bandwidth of 67 Mbps, and the 64Mb devices leverage a 54-MHz DDR mode to deliver read bandwidth of 54 Mbps. The memories provide low standby current and a deep-power-down mode that extends battery life for battery powered applications. The 128Mb and 256Mb devices can increase customers’ manufacturing throughput with a fast 0.30-ms program time per 256 bytes, and they offer a 50-ms erase time that enables new data to be written quickly. The devices are available in industry-standard packages including the USON (4mm x 4mm) package that saves board space and simplifies layout.
Cypress' FL064L 64Mb Quad SPI NOR Flash memory is qualified and has started production in 24-ball BGA, 8-pin SOIC and 8-contact USON packages. The FL128L 128Mb device is sampling in 24-ball BGA, 8-pin SOIC and 8-contact WSON packages and will go into volume production in the second quarter of 2017.
More information: http://www.cypress.com/NOR-FLASH-FL-L.