P-channel MOSFET offers increased power efficiency in space-critical applications
The MOSFET is provided in the ultra compact and thermally efficient DFN1616 package and is characterized by a low RDS(on) that ensures conduction losses are kept to a minimum, thereby increasing battery life. For example, at 29 mΩ at VGS of 4.5 V the MOSFET’s on-resistance performance is 15% better than that of its closest rival, benefitting battery disconnect and general load-switching applications.
The DFN1616 has a typical off-board profile of 0.5 mm, making it 20% thinner than competitor equivalents, and occupies a PCB area of just 2.56 mm2, 55% of that occupied by alternative larger 2 mm by 2 mm packages.
DMP1245UFCL also offers users the advantage of an increase in protection against ESD. With gate protection specified at 3 kV, 50% higher than nearest equivalents, the MOSFET is highly resistant to the effects of human-borne ESD.
The miniature DMP1245UFCL 12V P-channel MOSFET from Diodes Incorporated is priced at $0.15 each in 3k quantities.
Visit Diodes at www.diodes.com
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