The Discrete IGBT features improved switching behaviour to reduce circuit complexity and ultimately overall system costs by eliminating the need of capacitors and Zener diodes. Robustness and quality levels are further enhanced with a 25% increase in surge current handling capability, which gives increased confidence in the robustness of designs. The newly introduced device has low typical saturation voltage VCE(sat) of 1.60V at 175°C. High efficiency can be maintained even during high temperature operations.
The first wave of 30A, 40A, 50A and 75A current classes are available in the TO-247 3-pin package and are co-packed with the Rapid1 free-wheeling diode.