The increased output is achieved by using a unique integrated multi-junction die architecture that eliminates the shadowing effects created when using a multiple die approach. Furthermore, a low thermal resistance, less than 2°C/W, and a high maximum junction temperature of 135°C allow advanced thermal management that in turn ensures greater reliability and enables the PLW7070 to maintain its high luminous flux over the widest possible temperature range.
The GaN-on-Silicon multi-junction, single-chip design also sets a new benchmark in far-field imaging and the use of secondary optics in narrow beam angle applications, such as torches and portable lighting. Offered in 12V and 24V versions and operating from input currents from 350mA to 3A, Plessey’s PLW7070 LEDs provide output powers from 1W to 15W and are available with a full range of CCT and CRI options. The devices are supplied in a custom Aluminium Nitride ceramic package that has an industry standard solder pattern and footprint. A domed silicone lens provides a 120-degree wide viewing angle, while in-built ESD protection ensures stable yield throughout system manufacture and subsequent operation.
Plessey - www.plesseysemiconductors.com