The part will be a 36-layer 128Gbit NAND multilayer-cell (MLC) device. In addition the company said it would complete the design of a 48-layer triple-layer cell (TLC) in 2015 to be able to meet demand from the solid-state drive market in 2016. SK Hynix had announced a 24-layer NAND device as a prototype.
The announcement was made as part of SK Hynix's reporting on its financial results for the second quarter of 2015. The company made a net income of 1.1 trillion won on revenue of 4.6 trillion won which was year-on-year by 18 percent.
Toshiba started sampling a 48-layer 128Gbit NAND flash memory back in March 2015 while at the same time Micron Technology Inc. announced sampling of a 256Gbit MLC version of 3D NAND with select partners today, Both that an a 384Gbit version are expected to be in full production at Micron in 4Q15.
Samsung was the early leader in mass production 3D NAND with an announcement in November 2014 of a 128Gbit NAND flash memory that offers 3-bit multi-level cells and has 32 layers of memory in the vertical direction. As such a step up in stacking and memory capacity could be expected from Samsung soon.
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