Startup to exploit piezomagnetism for memory

October 29, 2017 // By Peter Clarke
Imperial Innovations, the commercialization arm of Imperial College, has announced that LoMaRe Technologies Ltd. will make use of research into thin films of piezomagnetic materials conducted at the college to produce non-volatile memory devices.

Claims have been made for the technology that it will read and write faster than phase-change memory with power consumption per bit at 100 times lower than flash and DRAM. The claim has also been made that PMRAM will be lower cost to produce than DRAM.

The technology underpinning LoMaRe originated in the departments of materials and physics and the company was founded by post-doctoral research assistants Jan Zemen, Andrei Mihai, Bin Zou and then PhD student Evgeniy Donchev. The company was founded in April 2017. However, there is noinformation about the principle of operation of such a memory or what materials or classes of materials LoMaRe is working with.

It is expected that LoMaRe will operate a technology and intellectual property licensing model and the company is seeking to partner with semiconductor integrated circuit manufacturers to start a program of R&D and eventually bring the technology to market.

The PMRAM technology is applicable to both embedded memory and stand-alone memory ICs, according to an article from Imperial Innovations.

"Initially we are focused on the embedded memory chip market," Imperial Innovations quoted Donchev as saying in his role as head of business development for LoMaRe. "LoMaRe's PMRAM technology will offer faster read/write speeds than Intel and Micron’s 3D XPoint, be more durable than NAND flash, cheaper than DRAM, complemented by high storage densities, and will have extremely low power operation, which can reduce energy consumption per bit by at least 100x compared to flash and DRAM."

Related links and articles:

www.imperialinnovations.co.uk

News articles:

Weebit scales SiO2 ReRAM to 4kbit

Report: TSMC to offer embedded ReRAM in 2019

Report: Samsung signs NXP as MRAM-on-FDSOI customer

ST opts for phase-change memory on 28nm FDSOI


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