"We can now build a CMOS image chip for a cell-phone-sized camera module that sees in the terahertz range," said Ken O, a professor and lead researcher for SRC’s program at UT Dallas and a key investigator in the Center for Circuit and System Solutions, a part of SRC’s Focus Center Research Program.
Today terahertz cameras are used, for instance, in the airport to see inside luggage and under clothing to detect hidden weapons, but the devices require expensive discrete components. By downsizing terahertz sensors for standard CMOS chips, the terahertz camera can be both size and cost reduced in the extreme.
"Inexpensive handheld terahertz cameras could be used to detect counterfeit money or documents, to see inside envelopes or packages, or to find where the studs, wires and pipes are in walls," said O.
The key to SRC's successful integration of terahertz imager on-a-chip is the discovery that high-speed Schottky diodes can be easily fabricated in CMOS. Even at the relaxed design rules of130 nanometer used for the demonstration chip, the high-speed Schottky diodes were able to achieve THz-range performance without changing the standard CMOS processing steps.
"We have figured out how to create high-speed Schottky diodes in CMOS without changing the process, just the layout," said O. "We just take an active region where a transistor would normally go, and don't draw the source-drain implantation mask layer, resulting in a Schottky diode."
All the details on how to make terahertz image arrays using Schottky diodes is presented in a paper entitled "280 GHz and 860 GHz Image Sensors Using Schottky-Barrier Diodes in 0.13 µm Digital CMOS," at the International Solid-State Circuits Conference this week in San Francisco.
Many other application areas should be able to profit from terahertz CMOS, which works as well as x-rays, but