Tower said the SBL13 process as heavily analog that uses SiGe bipolar for the analog and CMOS for digital control and that it had enhanced the process with a copper interconnect back-end. The process is aimed at wireless RF and digital TV tuners. Tower said it has design wins from customers that want to use the copper back-end and that volume is expected to ramp in the first half of 2012.
The SBL13 process includes three NPN transistors with 40-, 74- and 100-GHz transition frequencies as well as high density passive elements such as high-density MIM capacitors and 3-micron thick copper inductors. 130-nm CMOS with copper metallization achieves digital logic densities of up to 200-kgates per square millimeter to result in higher performance and more highly integrated RF products.
"This helps extend our leadership in SiGe technology and provides a unique multi-fab SiGe sourcing capability for our customers," said Marco Racanelli, senior vice president and general manager of the RF and high performance analog business group at Tower, in a statement.
For further information: www.towersemi.com.