and its band diagram illustrating band-to-band-tunneling triggered by biomolecule conjugation. Credit: Peter Allen, UCSB
"The abruptness of current increase in an electrical switch is quantified by a parameter called subthreshold swing and the sensitivity of any FET based biosensor increases exponentially as the subthreshold swing decreases. Thus, similar devices such as Impact-ionization- or Nano-electromechanical-FETs are promising for biosensing applications," explained Banerjee. "But since the T-FETs can be easily integrated in the widely available silicon-based semiconductor technology, they can be mass produced in a cost effective manner."
According to the researchers, their T-FET biosensor is expected to have tremendous impact on research in genomics and proteomics, as well as pharmaceutical, clinical and forensic applications – including the growing market of in-vitro and in-vivo diagnostics. Banerjee and Sarkar have filed a patent disclosure for their technology, which the researchers anticipate can be ready for the marketplace in as few as two years.
Visit the University of California - Santa Barbara