Exploiting the full potential of GaN
This paper explains the gate drive requirements for Infineon’s CoolGaN™ 600 V e-mode HEMTs. Various driving
solutions are discussed, ranging from the standard RC-coupled driver to a new differential drive concept
utilizing dedicated gate driver ICs. In half-bridge topologies, a hybrid configuration combining isolated and
non-isolated drivers could be an exciting alternative. Practical application examples and circuit schematics
complement the paper.