1 Gigabit NAND flash memory in 3.3V, 48-pin, TSOP1 configuration
Available in a “thin small-outline package” (TSOP) as the EN27LN1G08-25TIP and in a “ball grid array“ (BGA) version, the EN27LN1G08-25CEIP for greater board density and high speed applications, the chips offer a drop-in replacement for most major manufacturers products. In addition to being non-volatile, flash memory offers fast read access times, as fast as dynamic RAM and its mechanical shock resistance offers advantages over hard disk drives in portable devices, as does its high durability, being able to withstand high pressure and temperature. Features of the EON 1GB flash memory chip include supply voltage 2.7V to 3.6V, automatic program and erase, page read operation, command/address/data multiplexed I/O port, hardware data protection, high endurance of >100K program/erase cycles and data retention up to 10 years and a unique ID for copyright protection.
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