100V, automotive-qualified transistors boost power efficiency
STH315N10F7-2, STH315N10F7-6, and STP315N10F7 feature an optimised body-drain diode performance that minimises voltage spikes and switching noise over the operating voltage range, allowing more robust, reliable, and power-efficient designs.
STripFET F7 devices use an enhanced trench-gate structure that lowers device on-state resistance while simultaneously reducing internal capacitances and gate charge to deliver faster and more power-efficient switching. These three devices bring these benefits to the automotive market, claiming the lowest RDS(on) x Area and turn-off energy (Eoff) parameters available in the automotive market.
The new devices incorporate an optimised Crss/Ciss capacitive ratio to minimise switching noise, which, together with appropriate diode reverse-recovery softness, decreases EMI/EMC emissions. This eliminates the need for external filtering circuitry. Use the devices, ST suggests, in DC/DC, DC/AC and resonant LC converters in hybrid and electric vehicles. All three devices are Automotive Qualified to AEC-Q101. The STH315N10F7-2 and STH315N10F7-6 are housed in H2PAK packages with low stray inductance and high current capability and the STP315N10F7 is housed in a standard TO-220 package.
STH315N10F7-2 and STH315N10F7-6 are priced at $3.80 and the STP315N10F7 at $3.50 (1,000).
STMicroelectronics; www.st.com/agstripfetf7
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