100V dual MOSFET for LED headlights
New Products
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By
Christoph Hammerschmidt
A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.
Volume shipments begin in April.
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Main Specifications @Ta=25℃ |
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SSM6N813R | |||||
| Absolute maximum ratings |
Drain-source voltage |
100 | ||||
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Gate-source voltage |
+/-20 |
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Drain current |
3.5 | |||||
| Electrical Characteristics |
Drain-source on-resistance |
VGS=10V | 112 | |||
| VGS=4.5V | 154 | |||||
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Input capacitance |
242 | |||||
| Package | TSOP6F | 2.9mm×2.8mm; t=0.8mm | ||||
toshiba.semicon-storage.com/ap-en/product/mosfet/small-mosfet.html
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