100V eGaN transistor is 30x smaller than silicon
The EPC2051 offers power systems designers a 1.30 mm x 0.85 mm (1.1mm2) chipscale footprint for 48V power converters, LiDAR, and LED lighting.
Operating in a 50 V to 12 V buck converter, the EPC2051 achieves 97% efficiency at a 4 A output while switching at 500 kHz. In addition, the low cost of the EPC2051 brings the performance of GaN FETs at a price comparable to silicon MOSFETs.
“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100 V, EPC2051, is 30 times smaller than the closest silicon MOSFET.” said Alex Lidow, EPC’s CEO.
The EPC9091 development board is a 100 V maximum device voltage, half bridge featuring the EPC2051, and the UP1966A gate driver from uPI Semiconductor. The 50.8 mm x 50.8 mm (2” x 2”) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 100 V EPC2051 eGaN FET.
The EPC2051 eGaN FET is priced for 1K units at $0.67 each and $0.37 in 100K volumes and the EPC9091 development board is priced at $118.75 each. Both products are available for immediate delivery from distributor Digi-Key.
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