100V GaN chipset for 48V DC-DC converters

100V GaN chipset for 48V DC-DC converters

Technology News |
By Nick Flaherty

Efficient Power Conversion (EPC) has developed a chipset that combines a 100 V GaN driver and FETs up to 65 A offering higher performance and smaller solution size for high power density applications including DC-DC conversion and motor drives.

The EPC23101 eGaN gate driver plus EPC2302 eGaN FET with a maximum withstand voltage of 100 V, delivering up to 65 A load current, while capable of switching speeds greater than 1 MHz.

When operated in a 48 V to 12 V buck converter, the EPC23101 + EPC2302 chipset delivers 96 percent efficiency at 1 MHz switching frequency and 97 percent efficiency at 500 kHz switching frequency and can deliver 65 A with less than 50 °C temperature rise.

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The EPC23101 integrated circuit uses EPC’s proprietary GaN IC technology include integrated 3.3 mOhm RDS(on) high side FET with gate driver, input logic interface, level shifting, bootstrap charging, gate drive buffer circuits and gate driver output to drive the external low side eGaN FET.

The EPC2302 eGaN FET has an RDS(on), of just 1.8 mOhm, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses.

Both devices feature a thermally enhanced QFN package with exposed top with optimized pinout between the two devices. The combined chipset footprint, is 7 mm x 5 mm, offering an extremely small solution size for the highest power density applications.

The integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency.

“Discrete power transistors are entering their final chapter. Integrated GaN-on-Silicon offers higher performance in a smaller footprint with significantly reduced design engineering required,” said Alex Lidow, CEO and co-founder of EPC. “From the serenity or control environment of digital and analog controllers, the ePower Chipset translates the PWM command signals to high voltage and high current waveforms capable of driving real world loads. Designers can use the ePower Chipset to make lighter weight and more precise battery-operated BLDC motor drives for eMotion, robotic arms and drones, higher efficiency 48 V input DC/DC converters for data center, datacom, artificial intelligence, solar MPPT and other industrial and consumer applications.”

The EPC90142 development board is a 100 V maximum device voltage, 65 A maximum output current, half bridge featuring the EPC23101 Integrated ePower FET and EPC2302 eGaN FET and measures 2” x 2” (50.8 mm x 50.8 mm) board for optimal switching performance and contains all the critical components for easy evaluation.

The EPC23101 priced at $5.28 each in 1 Ku volumes; the EPC2302 is priced at $4.91 each in 1Ku volumes. The EPC90142 development board is price at $156.25 each.

All devices and boards are available at

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