100V N-ch power MOSFETs with logic level drive
Also applicable to use in secondary-side rectifiers, the FETsemploy Toshiba’s low-voltage trench structure process to minimise on-resistance and maximise high-speed performance and the fundamental Figure-of-Merit (FoM) (RDS(ON) * Qsw), improving performance in switching applications. Output losses are improved by the reduction of output charge. TPH6R30ANL offers current handling (ID) up to 45A and RDS(ON) as low as 6.3 mOhm while the TPH4R10ANL is rated at 70A and 4.1 mOhm. Support for 4.5 V logic level drive enables buffer-less drive from the controller IC, contributing to reducing power consumption. The devices are compatible with the high output voltage power supplies required in USB 3.0 related applications. They come in standard 5 x 6 mm SOP-Advance package.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com
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