100V N-Channel MOSFET for smaller power supplies

100V N-Channel MOSFET for smaller power supplies

New Products |
By Nick Flaherty

Toshiba Electronics Europe has launched a 100V N-channel power MOSFET built with its latest U-MOSX-H process.

The MOSFET is aimed at supporting smaller switching power supply designs in data centres and communication base stations as well as industrial uses.

The TPH3R10AQM has an on resistance of 3.1mΩ (max.), a significant 16% improvement over Toshiba’s current 100V product (TPH3R70APL) that uses the established generation process.

The device has a drain-source voltage (VDSS) of 100V and a drain current (ID) capability of up to 120A. The low gate switch charge (QSW) enhances efficiency in high frequency applications while the elevated maximum channel temperature (Tch) of 175°C reduces the need for thermal management, thereby reducing the size and cost of end equipment.

The MOSFET also has a larger safe operating area (SOA), up 76% when compared with the earlier generation, which makes it suitable for linear mode operation with higher efficiencies. This enhancement significantly improves suitability for, and performance in, hot swap circuitry. As the gate threshold voltage range is 2.5V to 3.5V, the device is less susceptible to spurious triggering.

The product uses the highly footprint compatible SOP Advance(N) package which gives the TPH3R10AQM a PCB footprint of just 4.9mm x 6.1mm. Shipments of the new TPH3R10AQM MOSFET start immediately.

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