100V, normally-off, GaN transistors in low inductance, thermally-efficient packaging
GS61002P, GS61004P, GS61006P and GS61008P are respectively 20A/21 mΩ, 40A/11 mΩ, 60A/8 mΩ and 80A/5 mΩ parts while GS71008P is an 80A/5 mΩ half bridge device.
These enhancement mode parts feature a reverse current capability, source-sense for optimal high speed design and exceptionally low Total Gate Charge (QG) and Reverse Recovery Charge (QRR). RoHS compliant, the devices are delivered in GaN Systems’ near chipscale, embedded GaNPX package which minimises inductance and optimises thermal performance.
Girvan Patterson, President of GaN Systems comments: "We believe we are the first company to have such a wide range of parts available for are sampling now. Applications include high speed DC-DC converters, low voltage AC motor drives, inverters and switched mode power supplies.”
GaN Systems’ Island Technology addresses cost, performance, and manufacturability challenges of gallium nitride resulting in devices that are smaller and more efficient than traditional design approaches; larger devices are built with multiple isolated “island” transistor elements, and redundancy allows the company to overcome some inherent limitations of working in the GaN material. The package it employs on these transistors uses a built-up layer structure of conventional PCB material, with multiple vias providing a very short and low-inductance path from the top of the die back to the pads of the package.
Patterson says that to view a GaN transistor as a silicon replacement with a better parameter set is to miss the point; the electrical performance at device level can be so much better that a complete new design approach is needed to get the most out of the devices – and that all of the elements of such an approach are now in place.
GaN Systems; www.gansystems.com
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