1200-V IGBTs deliver higher power density for motor drive and UPS applications
The new devices leverage IR’s field stop trench ultra-thin wafer technology that delivers lower conduction and switching losses. Co-packaged with a soft recovery low Qrr diode and featuring a 10 us minimum short circuit time rating, the devices are optimized for rugged industrial applications.
The packaged devices cover a broad current range from 10 – 50 A. Other key performance benefits include Tjmax of 175°C, positive VCE(on) temperature coefficient for easy paralleling and low VCE(on) to reduce power dissipation and achieve higher power density. Die products are also available.
Availability and Pricing
Pricing for the IRG7PH37K10D begins at $3.85 each respectively in 10,000-unit quantities. Production orders are available immediately. The devices are RoHS compliant.
Visit International Rectifier at www.irf.com
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