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1200V, 180A all-silicon-carbide module cuts losses with trench FETs

1200V, 180A all-silicon-carbide module cuts losses with trench FETs

New Products |
By Graham Prophet



Rohm says it has been able to successfully mass-produce the first trench-type SiC MOSFETs using a proprietary structure, with long-term reliability. The module implements MOSFETs with an advanced UMOS structure, that do not have a JFET region and that maximize SiC benefits. It provides the lowest drain-source resistance together with high speed switching performance, and – thanks to the extremely low Vf and the fast recovery performance of the built-in SiC-SBDs – it has almost no recovery loss Err.

 

As a result, the module achieves 77% lower switching loss than conventional IGBT modules and 42% lower switching loss than planar SiC Modules employing a 2nd-generation SiC-DMOS structure. This not only enables high-frequency operation but also contributes to smaller cooling systems as well as smaller peripheral components.

 

Rohm Semiconductor; www.rohm.com/eu

 

 

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