1200V/300A all-silicon carbide module for high power applications
The 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment. In addition, 77% lower switching loss compared to conventional IGBT modules enables high-frequency operation, contributing to smaller cooling countermeasures and peripheral components.
Since 2012, Rohm has been supplying a full SiC power module with an integrated power semiconductor element composed entirely of silicon carbide, and its 120A and 180A/1200V products continue to see increased adoption in the industrial and power sectors. And although further increases in current are expected due to energy-saving effects, in order to take advantage of the high-speed switching capability of SiC products an entirely new package design was needed that can minimise the effects of surge voltage during switching which can become particularly problematic at higher currents.
Accordingly, BSM300D12P2E001 features an optimised chip layout and module construction that significantly reduces internal inductance, suppressing surge voltage while enabling support for higher current operation up to 300A. Further high-current variants are promised, with SiC devices utilising high voltage modules and trench structures. BSM300D12P2E001 features a layout that cuts internal inductance by half, making it possible to increase the rated current to 300A.
It is a full H-Bridge SiC module that integrates an SiC SBD and SiC-MOSFET into a single package, of equivalent package size to standard IGBT modules; it has a built-in thermistor and is rated for operation at Tjmax=175°C
Rohm; www.rohm.com
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