1200V, 75A IGBT in a TO-247PLUS Package for solar energy
Magnachip Semiconductor has developed a 1200V 75A Insulated Gate Bipolar Transistor (IGBT) in a TO-247PLUS package for solar inverters.
Magnachip plans to start mass production of its 1200V IGBT in a TO-247PLUS package in October.
The 1200V 75A MBQA75T120RFS has a wide heat spreader to improve heat dissipation as compared to the TO-247 package. It also enhances power efficiency by reducing conduction loss by over 14% compared to its previous generation. This ensures stable operation even in overload conditions to boost system reliability.
The higher current of the device can replace two 40A IGBT devices and includes a fast recovery anti-parallel diode, which quickly removes residual current to reduce switching losses and guarantees a maximum operating junction temperature of 175°C.
The device is suitable for a wide range of applications requiring strict power ratings and high efficiency, including solar inverters, converters, uninterruptible power supply systems, and general-purpose inverters.
Magnachip entered the solar inverter market in 2020 with a 1200V 40A device, the MBQ40T120QFS, and began offering the 650V 75A IGBT (MBQ75T65PEH) in 2022.
According to market research firm Omdia, the discrete IGBT and silicon-based MOSFET sectors in the renewable energy market are expected to grow at a compound annual growth rate of 15% from 2024 to 2028.
“With this new IGBT product launch, Magnachip’s solar energy power product lineup has been further strengthened and now boasts high-performance IGBTs and MXT MV MOSFETs that satisfy the technical requirements of applications in the solar energy market,” said YJ Kim, CEO of Magnachip.
|
IGBT |
VCES [V] |
IC [A] @ TC=100℃ |
Package |
|
MBQA75T120RFS |
1200V |
75A |
TO-247PLUS |
|
MBQ40T120QFS |
1200V |
40A |
TO-247 |
|
MBQ75T65PEH |
650V |
75A |
TO-247 |
|
MBQ40T65QES |
650V |
40A |
TO-247 |
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