1200V, compact gate driver with coreless transformer technology
The basic system includes UVLO (under voltage lockout) for IGBTs and MOFETs as well as an active shutdown in the event that the driver is not connected to the power supply. The 1EDI drivers are supplied in a DSO-8 housing and can be used at ambient temperatures of up to 125°C in applications such as industrial drives, inverters, welding equipment, induction cooking appliances and power supplies for servers or telecommunications.
Infineon aims the driver component at the mass market both in the consumer as well as the industrial area; 1EDI driver ICs are offered in eight variants that can be operated at up to voltages of 1200V and are designed for use in applications with either IGBTs or MOSFETs.
These EiceDRIVER components are the first driver ICs to achieve a value of 100 kV/µsec for the CMTI (common mode transient immunity). Both the MOSFET, as well as one IGBT, drivers supply 6A output current. The MOSFET driver is optimised for use with power semiconductors that are based on CoolMOS technology. Due to lower induction loss, the EiceDRIVER thus enables an additional gain in efficiency of 0.5% with the latest generation CoolMOS C7. Further IGBT-only variants with 4, 2 and 0.5A will follow. These five variants have a separate output for charging and discharging the gate. An additional three variants are structured to limit the gate voltage (active Miller clamp) and provide 3, 2 and 1A of output current.
In addition to the compact class, the EiceDRIVER™ family also includes the EiceDRIVER™ Enhanced class which offers increased functionality both for the industrial as well as partially the consumer sectors.
Infineon; www.infineon.com/eicedriver
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