1200V GaN on 300mm wafers takes on SiC
The GaN wafer epi-foundry based at Suzhou Industrial Park, China, says this paves the way for HEMT transistor processing on mainstream 300mm CMOS-compatible lines, boosting volumes and driving down costs for 200V, 650V and 1200V GaN devices,
Commercial GaN power devices based on GaN-on-Si HEMT technology are gaining in popularity for a wide range of applications such as consumer electronics, industrial electronics and data centres, and in the energy, automotive and mobility sectors. The move to 300mm is driven by cost reduction and demand for more sophisticated integrated circuit design.
The company launched commercial 200mm GaN-on-Si HV HEMT epiwafers in 2014 and has now moved its AlGaN/GaN HEMT epitaxy process to 300mm Si substrates, while maintaining the excellent thickness uniformity and low wafer bow within 50µm.
The vertical voltage breakdown measurements suggest the wafers are suitable for 200V, 650V and 1200V power applications, substantially above today’s highest voltages for GaN. The move to 300mm also provides more oportunity for integrating logic on the chip.
- GaN breakthrough at 1200V takes on SiC
- Complementary GaN for logic integration
- Odyssey Semis aims to displace SiC with GaN
- ST looks to combine GaN power with microcontrollers
- Infineon opens 300mm power fab in Villach
The 300mm GaN-on-Si HEMT epitaxial layer structure uses an AlN nucleation layer, followed by a strain relief stack, GaN channel, AlGaN barrier and GaN cap. The narrow XRD AlN(002) peak and a good uniformity of FWHM indicate a high crystalline quality across the whole 300mm wafer.
The Al composition in the AlGaN barrier and the 2DEG carrier concentration measured at nine positions from wafer centre to wafer edge. The measurements give an average value of 19.9 percent and a deviation of 0.68 percent of Al composition in the AlGaN barrier, suggesting a uniform 2DEG electrical characteristics. This has been confirmed by the CV measurements, revealing an average electron concentration of 7.2E12 cm-2 with a deviation of less than 2 percent.
“Thanks to our optimised AlN nucleation layer, we are able to produce crack-free GaN-based HEMT epiwafers that meet the leakage current requirements on large size Si substrates up to 300mm,” said Dr Kai Cheng, CEO of Enkris. “Despite the challenges in the epitaxy process, strain management and defect control when moving to 300mm wafer size, we have achieved excellent structural quality and electrical properties in the AlGaN/GaN HEMT structures. This will certainly encourage the development of high-power integrated circuits to yield system-on-chip and further reduce the cost of GaN power devices.”
- Hybrid GaN-on-SiC wafers boost for power devices
- Infineon, Panasonic team for 650V GaN chips on 200mm wafers
- 150mm GaN-on-SiC epiwafer boost for power chips
- BMW backs GaN Systems for production power
- CEO Interview: The next generation of GaN power ICs
- UK project to develop vertical GaN devices
Other articles on eeNews Power
- SK Innovation spins out world’s largest battery business
- US fishing group sues European-backed wind farm
- Swiss graphite startup aims for 15 minute fast charging batteries
- Flex, Infineon team for 48V switched capacitor intermediate bus converter
- 750V SiC FET achieves 6mΩ on resistance