
1200V Generation-8 IGBT family steps up efficiency and ruggedness
Gen8 devices are available with current ratings from 8A up to 60A with typical VCE(ON) of 1.7V and a short-circuit rating of 10 µsec for increased power density and superior robustness.
This technology offers softer turn-off characteristics for motor drive applications, minimising dV/dt to reduce EMI, and over-voltage, increasing reliability and ruggedness. A narrow distribution of parameters offers excellent current sharing when paralleling multiple IGBTs. The thin wafer technology delivers improved thermal resistance and maximum junction temperature up to 175°C.
Part Number |
Package |
BV (V) |
I(nom) (A) |
VCE(ON) (V) |
Tsc (µs) |
IRG8P08N120KD |
TO247 |
1200 |
8 |
1.7 |
10 |
IRG8P15N120KD |
TO247 |
1200 |
15 |
1.7 |
10 |
IRG8P25N120KD |
TO247 |
1200 |
25 |
1.7 |
10 |
IRG8P40N120KD |
TO247 |
1200 |
40 |
1.7 |
10 |
IRG8P50N120KD |
TO247 |
1200 |
50 |
1.7 |
10 |
IRG8P60N120KD |
TO247 |
1200 |
60 |
1.7 |
10 |
International Rectifier; www.irf.com
