1200V QSiC half bridge power modules

1200V QSiC half bridge power modules

New Products |
By Nick Flaherty

SemiQ has expanded its range of QSiC power modules portfolio with a half bridge series using 1200V silicon-carbide (SiC) power MOSFETs.

The 5mΩ, 10mΩ, and 20mΩ half bridge SiC power modules have a high breakdown voltage over 1400V and support high-temperature operation (Tj = 175°C) with low Rds(On) shift over the full temperature range and are mounted on a ceramic substrate. The MOSFETs in the modules exhibit industry-leading gate oxide stability and long gate oxide lifetime, avalanche unclamped inductive switching (UIS) ruggedness and long short-circuit withstand time.

The half bridge SiC modules are suitable for EV charging, on-board chargers (OBCs), DC-DC converters, E-compressors, fuel cell converters, medical power supplies, photovoltaic inverters, energy storage systems, solar and wind energy systems, data centre power supplies, UPS/PFC circuits, Vienna rectifiers, and other industrial applications.

To ensure that each module has a stable gate threshold voltage and high-quality gate oxide, SemiQ’s modules undergo gate burn-in testing at the wafer level. Besides the burn-in test, which helps to stabilize the extrinsic failure rate, stress tests such as gate stress, high-temperature reverse bias (HTRB) drain stress, and high humidity, high voltage, high temperature (H3TRB) allow achieving the required automotive and industrial grade quality levels. The devices also have extended short-circuit ratings. All modules have undergone testing exceeding 1350V.

“SemiQ’s commitment to reliability and testing sets us apart in the semiconductor industry. Our high-performance QSiC 1200V MOSFET modules are proven to withstand challenging conditions, enabling engineers to develop reliable systems for the renewable, automotive, medical, and industrial sectors,” said Dr. Timothy Han, President at SemiQ.

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