1200V SiC MOSFETs with low on-resistances
The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs offer low on-resistance Rds(on) of 120mΩ and 160mΩ. These SiC MOSFETs are designed for use as power semiconductor switches in a wide range of various power conversion systems, outperforming their silicon MOSFET counterparts substantially in terms of blocking voltage, specific-on resistance, and junction capacitances. They also offer a combination of high operating voltages and ultra-fast switching. The low gate charge and output capacitance combined with the low on-resistance allows for minimal power dissipation, higher efficiency and a reduction in the size and sophistication of the cooling techniques required.
The SiC MOSFETs are the latest products of a strategic partnership that Littelfuse formed with Monolith in 2015 to develop power semiconductors for industrial and automotive markets.
Typical applications include electric vehicles, industrial machinery, solar inverters and medical equipment as well as switch-mode power supplies and high voltage DC-DC converters.
“These new SiC MOSFETs provide power converter designers with a state-of-the-art alternative to traditional silicon-based transistors,” said Michael Ketterer, product marketing manager for Power Semiconductors at Littelfuse. “Their inherent material characteristics and ultra-fast switching capabilities offer a variety of design optimization opportunities including increased power density, higher efficiency, and the potential for lower bill-of-material costs.”
The LSIC1MO120E0120 and LSIC1MO120E0160 SiC MOSFETs are available in TO-247-3L packages in tubes in quantities of 450.