16 Gb flash memory joins 24-nm family; simplifies industrial designs

16 Gb flash memory joins 24-nm family; simplifies industrial designs

New Products |
By Graham Prophet

The 16 Gb BENAND (BCH ECC NAND) die is housed in an industry-standard 48-pin TSOP package, and offers a combination of high read/write performance, effective write endurance (using 8-bit BCH error correction code), and extended temperature operation. This makes it suitable for a wide variety of commercial and industrial applications.


The addition rounds out Toshiba’s broad SLC product lineup, allowing designers to take advantage of the price/performance of advanced 24nm NAND flash SLC technology at densities from 1 Gb to 128 Gb. Based on a 4 x 4Gb die, 16Gb BENAND operates from a power supply of 2.7V to 3.3V with a temperature range of -40°C to 85°C. Many industrial applications have a long life expectancy. Toshiba designed BENAND with this in mind. With the ability to replace older generations of discrete SLC NAND, BENAND can extend product while also potentially reducing BOM costs.


Toshiba’s 24nm BENAND requires no ECC from the host controller. This enables it to be used with host controllers that do not have 8-bit ECC capability. Many legacy designs still use older processors that do not have 8-bit ECC capability, making BENAND an option for companies looking to design in updated NAND with existing hardware. To ensure easy migration, BENAND’s features such as page/block size, spare area size, commands, interface and package remain the same as legacy 4x-nm SLC NAND.


Toshiba comments, “SLC NAND is still very much an integral part of the overall NAND market, and leading-edge 24nm devices play a key role in enabling replacement of the older NAND devices that are still being used today.”





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