STMicroelectronics has launched a new family of 650V GaN high electron mobility transistor (HEMT) power devices for slimmer, more efficient consumer power supplies.
The first device in the STPower family is the 650V SGT120R65AL with 120mΩ maximum on-resistance (RDS(on)), 15A maximum current capability, and a Kelvin source connection for optimum gate driving. These intrinsically normally-off devices) are available in top, bottom and dual side cooled SMD packages with capacitances 10 times lower than silicon MOSFETs.
650V GaN transistors in development are available now as engineering samples. These include the SGT120R65A2S with 120mΩ RDS(on) in an advanced laminated package, the 2SPAK, which eliminates wire bonding to boost efficiency and reliability in high-power and high-frequency applications, as well as the SGT65R65AL and SGT65R65A2S both with 65mΩ RDS(on) in PowerFLAT 5×6 HV and 2SPAK, respectively. Volume production for these products is expected in H2 2022.
ST has taken multiple routes in the development of GaN devices, using technology from ExaGaN, developed with CEA-Leti and built at the fab in Tours, France, as well as technology with TSMC and Macom. It has also previously launched the MasterGaN family that combines a gate drive with 600V GaN FET in a single package.
A new cascade GaN transistor in the G-FET family is the SGT250R65ALCS with 250mΩ RDS(on) in a PQFN 5×6, will be available for sampling in Q3 2022. The G-FET family is a very fast, ultra-low Qrr, robust GaN cascode or depletion-mode FET with standard silicon gate-drive for a wide range of power applications.
Target applications for the GaN families include high volume consumer equipment such as chargers, external power adapters for PCs, LED-lighting drivers, and power supplies inside televisions and home appliances.
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“Commercializing GaN-based products is the next frontier for power semiconductors, and we are ready to realize the potential of this exciting technology. Today ST is announcing the first product in a new family, belonging to the STPOWER portfolio, that can deliver breakthrough performance for a large variety of power supplies across consumer, industrial, and automotive applications,” said Edoardo Merli, Power Transistor Macro-Division General Manager and Group Vice President of STMicroelectronics’ Automotive and Discrete Group.
A standard mobile phone charger can be reduced by up to 40 percent in size when using GaN components, or it can be designed to deliver more power in the same size. Similar performance improvement in efficiency and power density can be envisioned for a broad number of applications across consumer, industrial, and automotive electronics.
The SGT120R65AL G-HEMT device is available now in an industry-standard PowerFLAT 5×6 HV compact surface-mount package, at $3.00 (1000 pieces) for PC adaptors, USB wall chargers, and wireless charging.
www.st.com/gan-hemt-transistors
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