16Gbit DDR5 DRAM made with 1c-nm process
SK Hynix has announced it has developed the worlds first 16Gbit DDR5 DRAM using its 1c node, the sixth generation of manufacturing processes between 20nm and 10nm.
The 1c memory process technology is the closest yet to 10nm.
SK Hynix said it will be ready for mass production of the 1c DDR5 within 12 months and plans to start volume shipments in 2025.
The cost competitiveness of the product is improved compared with the previous generation by the adoption of a novel material in certain parts of the extreme ultra violet (EUV0 lithography. SK Hynix said it also enhanced wafer productivity by more than 30 percent through technological innovation in design.
The operating speed of the 1c DDR5 – expected to be adopted for high-performance data centers – is 8Gbps, an improvement of 11 percent on the previous generation. With power efficiency also improved by more than 9 percent, said the adoption of 1c DRAM could help data centers reduce the electricity cost by as much as 30 percent.
“We are committed to providing differentiated values to customers by applying the 1c technology equipped with the best performance and cost competitiveness to our major next-generation products including HBM, LPDDR6, and GDDR7,” said Kim Jonghwan, head of DRAM development at SK Hynix.
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