1700-V SiC Schottky diodes enable cost savings for solar, motor drive and traction applications
While the 1700V bare die have been available for customers who design their own custom power modules, the new TO-247-2 packages allow customers to take advantage of SiC for lower-power 1700 V designs, enable more design flexibility in choosing current levels, and support a faster time to market.
The 1700 V SiC Schottky diodes provide a number of advantages for design engineers in high-voltage power applications. Silicon carbide diodes enable maximum power efficiency and better EMI performance. The switching loss improvement allows for increased system frequencies that can reduce the size of magnetic and capacitive components. Reductions in system size, weight and cost can be achieved. The availability of 1700 V SiC diodes can also eliminate the need for stacking multiple lower voltage silicon diodes, thereby cutting component count, improving thermal performance and increasing reliability.
Designated the C3Dxx170H Series, the new Cree SiC Schottky diodes are rated for 10 A/1700 V and 25 A/1700 V and are available in an industry standard TO-247-2 package. Operating junction temperature is rated for -55 to +175°C.
More informtiona about the new Cree SiC Schottky diodes at
www.cree.com/power/diodes.asp
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