1700V gate drivers for 62 mm SiC and IGBT modules
Power Integrations has announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.
The SCALE-2 2SP0230T2x0 dual-channel gate drivers from Power Integrations deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The new drivers also include advanced active clamping (AAC) to protect the switches against over-voltage during turn-off, enabling higher DC link operating voltages.
- Gate driver targets 1.7 kV to 4.5 kV IGBT and SiC dual channel modules
- Gate driver is plug-and-play with 4500V IGBT power modules
- Multi-channel gate drivers use common pinout
The dual channel gate drivers are aimed at applications such as railway auxiliary converters, offboard EV chargers and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid.
The 134 x 62 mm 2SP0230T2x0 provides reinforced isolation at 1700 V, enabling use for up to 1700 V operation; this is 500 V higher than conventional drivers, which are typically limited to 1200 V.
“The 2SP0230T2x0 gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules. This reduces both system design and sourcing challenges, and the plug-and-play approach speeds development,” said Thorsten Schmidt, product marketing manager at Power Integrations
The SCALE-2 2SP0230T2x0 plug-and-play gate drivers are available for sampling now.
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