MENU

18 W GaN on SiC HEMT operates over DC to 6 GHz

18 W GaN on SiC HEMT operates over DC to 6 GHz

New Products |
By eeNews Europe



The device is constructed with the company’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Typical application areas include test instrumentation, wideband power amplifiers, jammers, radar and avionics, professional and military radio. The devices feature a linear gain of over 10 dB at 6 GHz, operating voltage of 28 V and P3dB output power of 18 W at 6 GHz.

For further information: www.triquint.com.

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News

Share:

Linked Articles
10s