180-µm pHEMT FET from TriQuint Semiconductor
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By
eeNews Europe
The TGF2018 is designed using TriQuint’s proven standard 0.25-µm power pHEMT production process. This process features advanced techniques to optimise microwave power and efficiency at high drain bias operating conditions. The TGF2018 typically provides 22 dBm of output power at P1dB with gain of 14 dB and 55% power-added efficiency at 1 dB compression. This performance makes the TGF2018 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.
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