1Gbit NOR flash is space qualified
Space tech provider CAES has launched a line of rad hard NOR flash memory devices up to 1Gbit to support microprocessors and FPGAs.
The NOR flash devices are purpose-built using intrinsically radiation-hardened Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) memory technology. A single 1 Gbit SONOS RadHard NOR Flash device can store multiple boot images, while typically consuming less than 100mW of power.
The aim is to support the CAES GR740 processor, low power Certus-NX-RT and CertusPro-NX-RT FPGAs from Lattice Semiconductor as well as Xilinx’s XQRKU060 and AI-optimized Versal devices.
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SONOS technology has exceptional bit-cell radiation resilience, delivering over 300 krad (Si) TID and 100K cycles per sector performance. CAES’ RadHard design techniques lower error rates, suiting the new devices to the highest-reliability mission profiles in the harshest environments, including those requiring QML-Q and QML-V military- and space-grade qualification.
CAES RadHard NOR Flash Memories are available in 1 Gbit and 64 Mbit densities, with standard x1, x8 and x16 parallel or SPI interfaces. They are powered by a single, wide-range, 1.8V – 3.3V source. The new modules also allow configurable read/write modes, enabling the same scalable technology block to be reused multiple times.
“Modern space programs require more processing power in ever smaller packages. By using our new SONOS RadHard NOR Flash Memories, the most contemporary FPGAs can deliver greater processing power for superior mission capability and functionality,” said Mike Elias, Senior Vice President and General Manager, Space Systems Division, CAES. “Our long-range product and technology roadmap is aligned with leading FPGA and processor producers, ensuring technology relevance, scalability and interoperability with their programs.”
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